In this article, two wideband high-eciency Class-J power ampliers operating in X and Ku bands, respectively, are designed based on continuous mode. The optimal impedance regions of the transistors are determined using harmonic load-pull techniques. An onchip output matching network with second harmonic control functionality is designed to achieve Class-J operation. To verify the feasibility of designed circuits, both power ampli- ers are designed and fabricated using a 0.25 mm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The power ampliers are both biased at 6 V/1 V. The measured results show the X-band and Ku-band power ampliers achieve peak saturated output powers of 31.2 dBm and 30.8 dBm, respectively. The power-added eciencies (PAEs) of the two ampliers within their operating bands reach up to 48% and 45.3%, respectively. Compact size and high eciency make them suitable for integration into phased array transmit/receiver (T/R) modules.
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